原文传递 Radiation Effects in 2D Heterostructure Devices.
题名: Radiation Effects in 2D Heterostructure Devices.
作者: Vogel, E. M.; Fleetwood, D.; Pantelides, S.; Zhang, E.
关键词: Radiation effects, Heterojunctions, Defects (materials), Fabrication, Density functional theory, Graphene, Layers, Field effect transistors, X rays, Electric current, Voltage, Dielectrics, Transconductance, Vacancies (crystal defects), Charge density, Low temperature, Gold, Chemical synthesis, Raman spectra, Stoichiometry, Heterostructure devices, Radiation-induced defects, Two dimensional materials, Dft (density functional theory), Overlayers, Fet (field effect transistors), Graphene fet, Passivation materials, Energy distribution, Dutta-horn model, Cnp (charge neutrality point), Drain current, Gate voltage, X-ray irradiation, Fermi level pinning, Electronic properties
摘要: The overall objective of this project was to develop a fundamental understanding of radiation-induced defects in heterostructure devices fabricated using 2D materials, including the atomic-scale nature and location of defects in the heterostructures, the impact of these defects on operation for both lateral and vertical electronic transport, and the potential characterization, device fabrication and characterization, radiation and reliability effects, and density-functional-theory (DFT) calculations to develop a fundamental understanding of radiation-induced defects in these devices.
报告类型: 科技报告
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