摘要: |
This is the final report of the Phase II of the DARPA MIDAS program from Prof. Donald Lie’s team at Texas Tech University (TTU). Monolithic high-efficiency wideband millimeter-wave power amplifiers (mm-Wave PAs) can be critically important for realizing ultra-low-power, miniaturized mm-Wavedigital arrays (MIDAS) systems, since these PAs can often consume about half of the overall system power budget. This work, therefore, performs fundamentalresearch on the design of broadband 18 – 50 GHz mm-Wave PAs in several state-of-the-art semiconductor technologies for potential commercial and DoD(Department of Defense) applications. Specifically, we take advantages of the HRL’s (Hughes Research Labs) 40 nm GaN T3 technology on SiC, GF’s(GlobalFoundries) 90 nm SiGe BiCMOS (9HP) and GF’s 22nm CMOS-FD (fully-depleted) SOI processes (22FDX), together with novel IC design techniques,to realize highly-efficient broadband mm-Wave PAs. We will investigate the design of broadband mm-Wave PAs in the medium output power range of ~ < 20dBm, with very broad BW of ~ 20-30 GHz, excellent broadband peak PAE > ~20 - 45 %, and also good linearity. This comprehensive final report on broadbandhighly-efficient and linear mm-Wave PA design consists of six chapters, 131 figures, and over two hundred pages. |