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Single-Spin Tunneling Force Microscopy for Characterization of Paramagnetic Defects in Electronic Materials.
| 题名： | Single-Spin Tunneling Force Microscopy for Characterization of Paramagnetic Defects in Electronic Materials. |
| 作者： | Williams, C. C.; Boehme, C. |
| 关键词： | Acquisition, Data set, Department of defense, Electron transfer, Engineering, Low temperature, Mathematics, Spin resonance, Telegraph signals, Detection, Magnetic fields, Digital data, Electron transitions, Frequency, Frequency shift, Resonance, Materials, Materials science, Silicon compounds, Magnetic resonance |
| 摘要： | This report details the objectives and research progress made during the last funded period toward the primary goal of this project: to develop and demonstrate a single-spin magnetic resonance detection method with atomic scalespatial resolution. It contains a brief summary of progress made prior to the last funding period, after which adetailed summary of research performed during the funding period is presented. |
| 报告类型： | 科技报告 |
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