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原文传递 New Fit to Secondary Emission Yield in the Low Impact Voltage Regime: An Improvement of Vaughan's Expression (Postprint).

题名：	New Fit to Secondary Emission Yield in the Low Impact Voltage Regime: An Improvement of Vaughan's Expression (Postprint).
作者：	Ludwick, J.; Tripathi, G.; Cahay, M.; Fairchild, S. B.; Murray, P. T.; Back, T. C.
关键词：	Air force facilities, Microscopes, Accuracy, Air force, Electronics laboratories, Electrons, Graphical user interface, Microscopy, Scanning electron microscopes, Scanning electron microscopy, Electron microscopes, Materials, Data set, Digital data, Electron emission, Electron microscopy, Emission, Measurement, Experimental data, Secondary emission
摘要：	Reducing the emission of secondary electrons from materials is critical to improved efficiency and increased performance in high power vacuum electronics. A new mathematical expression for the secondary emission yield (SEY) as a function of the impact voltage up to a maximum of 5 kilovolts is proposed which is an extension of a formula first suggested by Vaughan. The new analytical fit and Vaughans fit are compared with SEY experimental data reported by others and measured by our group. The new analytical expression gives good fits to SEY experimental data in all cases, even when the SEY maximum is either slightly larger or below unity, two situations for which Vaughans fit is either inadequate or inapplicable.
报告类型：	科技报告